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PROFET(R) BTS 410 F2
Smart Highside Power Switch
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
65 V 4.7 ... 42 V 220 m 1.8 A 2.7 A
TO-220AB/5
5
5 1 Straight leads
1 5
Standard
SMD
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage source V Logic Voltage sensor
3
Overvoltage protection
Current limit
Gate protection
OUT
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Open load
2
IN
Temperature sensor
5
ESD
Logic
Load
detection Short circuit detection
GND
4
ST
PROFET
Load GND
1
Signal GND
1
)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load.
Semiconductor Group
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BTS 410 F2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST
Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 5.0 5.0
Unit V V A C W J kV V mA
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---Values typ max -2.5 -75 35 -Unit K/W
chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5):
2
)
3) 4) 5
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
2
2003-Oct-01
BTS 410 F2 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 C: RON -190 390 IL(ISO) IL(GNDhigh) 1.6 -1.8 -220 440 -1 A mA s m
Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 6) Undervoltage shutdown
ton toff dV /dton -dV/dtoff
12 5 ---
-----
125 85 3 6
V/s V/s
Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 7) Overvoltage protection Tj =-40...+150C: Ibb=4 mA Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND
4.7 2.9 2.7 ---42 40 -65 -----
----5.6 0.1 --0.1 70 10 18 -1
42 4.5 4.7 4.9 6.0 -52 ---15 25 20 2.1
V V V V V V V V V A A mA
6
) )
7) 8
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
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BTS 410 F2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 11) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC)
min value valid only, if input "low" time exceeds 60 s
4.0 3.5 2.0 ---
-5.5 3.5 2.7 --
11 10 7.5 -450
A
A s V V C K V
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage(pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 11) Diagnostic Characteristics Open load detection current
(on-condition)
VON(CL) VON(SC) Tjt
Tjt
-Vbb
61 --150 ---
68 -8.5 -10 --
73 75 ---32
IL (OL) Tj=-40 ..150C: 2 -150
mA
9
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown 11) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
)
Semiconductor Group
4
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BTS 410 F2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150 VIN(T+) Input turn-off threshold voltage Tj =-40..+150 VIN(T-) Input threshold hysteresis VIN(T) Off state input current (pin 2), VIN = 0.4 V IIN(off) On state input current (pin 2), VIN = 5 V IIN(on) td(ST SC) Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope td(ST) (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low)
1.5 1.0 -1 10 -300
--0.5 -25 ---
2.4 --30 70 450 1400
V V V A A s s
5.0 --
6 --
-0.4
V
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
2003-Oct-01
BTS 410 F2 Truth Table
Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H
13
Status 412 B2 H H L H H L L H L L L15) L15) L L 410 D2 H H H L H L H 14 H (L )) L L 15 L) 15) L L L 410 E2/F2 H H H L H L H H (L14)) L L H H H H 410 G2 H H H L H H H H (L14)) L L H H H H 410 H2 H H L H H L L H L L H H H H
)
H L L H H L L L L L L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON
Input circuit (ESD protection)
R IN I
ESDZDI1 ZDI2 GND
I
I
ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 15) No current sink capability during undervoltage shutdown
13
Semiconductor Group
6
2003-Oct-01
BTS 410 F2
Overvolt. and reverse batt. protection Status output
+5V
R IN
IN V Z2 + V bb
R ST(ON)
ST
R ST
ST V
Logic
GND
ESDZD
Z1
PROFET
GND
ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
R GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, RST= 15 k
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
+ V bb
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
V ON
ON
VON
OUT
Logic unit
Short circuit detection
OUT
Logic unit
Open load detection
Inductive and overvoltage output clamp
+ V bb V
GND disconnect
Z
VON
3 IN Vbb PROFET 4 ST GND 1 V GND OUT
OUT GND
2
PROFET
5
VON clamped to 68 V typ.
V bb V IN V ST
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Semiconductor Group
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2003-Oct-01
BTS 410 F2
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT
Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT EL ELoad
2
5
IN
=
ST GND
GND
ZL
{
L RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
2
5
with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb
bb
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 10000
Normal load current can be handled by the PROFET itself.
Vbb disconnect with charged external inductive load
S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT
5
D
1000
bb
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
100 1.5 1.75 2 2.25 2.5 2.75 3 IL [A]
Semiconductor Group
8
2003-Oct-01
BTS 410 F2
Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1 tp [s]
Semiconductor Group
9
2003-Oct-01
BTS 410 F2 Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version
BTS 412 B2 410D2 410E2 410F2 410G2 410H2 B D E F G H 307 308
Overtemperature protection with hysteresis Tj >150 C, latch function16)17) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.16) (when first turned on after approx. 150 s) Achieved through overtemperature protection
X
X X
X X
X X
X
X X X X X X X X X X X X X X X X X X X X X X -19) X X X X X X X X X X X X X X 19)
X
Open load detection
in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X -19) X X X X X -19) X X X X X X X X X X X X X X X X X X X X X
Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart )
18
Status feedback for
overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage
X -
Status output type
CMOS Open drain X
Output negative voltage transient limit
(fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X X X X X X X
Load current limit
high level (can handle loads with high inrush currents) low level (better protection of application)
Protection against loss of GND
16
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Semiconductor Group
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2003-Oct-01
BTS 410 F2
Timing diagrams
Figure 1a: Vbb turn on: IN
Figure 3a: Turn on into short circuit,
IN
t V bb
ST d(bb IN)
VOUT V td(SC)
OUT
A ST open drain
I
L
t t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ.
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
t ST
*)
IL
d(ST)
I L(SCp) I L(SCr)
V
OUT
ST
IL I L(OL) t
Heating up may require several seconds, Vbb - VOUT < 8.5 V typ. *) if the time constant of load is too large, open-load-status may occur
t
Semiconductor Group
11
2003-Oct-01
BTS 410 F2
Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load
IN
IN
ST
ST
t d(ST)
V V OUT
OUT
I IL **) t
**) current peak approx. 20 s
L
open t
Figure 4a: Overtemperature, Reset if (IN=low) and (TjFigure 5b: Open load: detection in ON-state, open load occurs in on-state
IN IN ST ST V V
OUT
t d(ST OL1)
t
d(ST OL2)
OUT
I T
J
normal
L
open
normal
t t
td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ
*) ST goes high , when VIN=low and TjSemiconductor Group
12
2003-Oct-01
BTS 410 F2
Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb bb
V
bb(under)
V ON(CL)
Vbb(over)
V bb(o rst)
V
Vbb(u cp) V
bb(u rst)
V V OUT
OUT
ST ST open drain t Figure 9a: Overvoltage at short circuit shutdown: Figure 6b: Undervoltage restart of charge pump V on VON(CL) IN
t
Vbb
V bb(o rst)
off-state
on-state
off-state
Output short to GND VOUT short circuit shutdown
V
bb(over)
V
bb(u rst)
V
IL
bb(o rst)
V V
bb(under)
bb(u cp)
ST t V bb
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
charge pump starts at Vbb(ucp) =5.6 V typ.
Semiconductor Group
13
2003-Oct-01
BTS 410 F2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 410 F2
Ordering code Q67060-S6103-A2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS410F2 E3062A T&R: Q67060-S6103-A4
TO-220AB/5, Option E3043 Ordering code
BTS 410 F2 E3043 Q67060-S6103-A3
Changed since 04.96 Date Change Mar. EAS maximum rating and diagram 1997 and ZthJC diagram added ESD capability (except Input) specified to 2kV, RthJA SMD specified IL(GND high) max reduced from 10 to 1 mA Option Overview table columns for BTS307/308 added Fig. 1a: Vout-spike at Vbb-turn-on added
Semiconductor Group
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2003-Oct-01
BTS 410 F2
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
15
2003-Oct-01

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